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Patterning Material Forecast and Market Share Service
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Materials Forecasted

  • g– and i-line resist
  • Positive 248nm resist
  • Positive 193nm dry resist
  • Positive 193nm Immersion resist
  • i-line BARC
  • 248nm BARC
  • 193nm BARC
  • TARC
  • Top Coat / Barrier Layer
  • Spin-on-Carbon Layers
  • Spin-on-Silicon Layers

Regions Forecasted

  • North America
  • Japan
  • Europe
  • Taiwan
  • Korea
  • ROW

Devices Forecasted

  • DRAM
  • Flash
  • Advanced Logic
  • Logic
  • Discrete and Passive

Market Share Estimates

Each report will include market share estimates for AZEM, Brewer / Nissan, Dongjin, FujiFilm Electronic Materials, Honeywell Electronic Materials, JSR Microelectronics, Dow Electronic Materials, ShinEtsu, Sumitomo, and TOK.

Methodology

Linx maintains a unique global materials demand forecast model for IC manufacturing materials. This model is based on a regularly updated wafer start forecast forecast provided under licence by Semico. Linx develops and maintains representative process maps for the device categories detailed in this report by manufacturing node. Combining these process maps with wafer start forecasts provides us with a detailed understanding of process requirements, allowing us to develop volume forecasts.

As an independant check of these forecasts, key suppliers in each market segment are periodically interviewed to collect input on sales volume and revenue. This information is used to correlate market forecasts, as well as to derive market share estimates.

Regional Estimates

Linx estimates regional wafer start volumes in each device segment, updated with information on IC manufacturer capacity plans and utilization.

Device Estimates

For each device category Linx applies a generic process map that includes common best practice for each product generation of that device technology. Where significant technology differences exists between device architectures at one node, the model segments the materials need on estimates of the proportion of devices using each architecture. An example of this is the different layer counts for DRAM at the 65nm HP used for aluminum interconnect versus damascene copper.

The categorization of devices into the reported segments is shown in the table below:

SIA Reported Category Linx Categories
DRAM DRAM
NAND Flash
NOR
MPU Advanced Logic
DSP
Computing
Communications
PLD
MCU Logic
Oth Micro Logic
Std Cell
Gate Array
SRAM
Analog Discrete and Passive
Optoelectronics
Discrete
Other NV Not covered 
Digital Bipolar Not Covered 

Market Share Estimates

Linx estimates market share by cross-correlating market forecasts with reported revenues from market participants. These estimates are made solely on a revenue basis.

Year EUV enters production
ASIC 2016
DRAM/MRAM 2018
NAND/NOR 2015
MPU 2015

Title: Patterning Material Forecast and Market Share Service
 
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